Materials aspects of GaAs and InP based structures

Main Author: Swaminathan
Other Authors: Macrander,
Published: New Jersey: Prentice Hall, 1991.
Subjects:
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020 0 0 |a 0133468627  
090 0 0 |a TK7871.85   |b .S937 1991 
100 1 0 |a Swaminathan  
245 1 0 |a Materials aspects of GaAs and InP based structures   |c V. Swaminathan and A. T. Macrander. 
260 0 0 |a New Jersey:   |b Prentice Hall,   |c 1991. 
300 0 0 |a xvii,606p. 
504 0 0 |a Includes bibliographical references and index 
650 0 0 |a Semiconductors --   |x Materials  
650 0 0 |a Gallium arsenide semiconductors  
650 0 0 |a Epitaxy  
700 1 1 |a Macrander,   |h A. T.  
999 |a 0000009879  |b Book  |c Open Shelf  |e HQ Library